Triethylindium （ C6H15In ）
Triethyl indium can be used to prepare semiconductor materials, such as transparent conductive thin film
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Precursors, within the industrial and scientific realms, denote substances or compounds utilized as starting materials or intermediates in the production of various end products. These substances play a crucial role in multiple industries, serving as the foundation for the synthesis of diverse materials, chemicals, and advanced technological components.
Triethyl indium can be used to prepare semiconductor materials, such as transparent conductive thin film
Electronic grade TEOS is mainly used in the chemical vapor deposition (CVD) process of IC
High purity Triethylstibane is a supporting material for epitaxial growth using metal organic chemical vapor
Pentakis(dimethylamino) tantalum, PDMAT is a soild tantalum precursor for TaN barrier layers to prevent copper
As an important silicon-based precursor material, DIPAS is widely used in vapor deposition and atomic
Bis(diethylamino)silane is available in high purity and electronic grade forms suitable for semiconductor processing and
Pentakis(dimethylamino)tantalum (PDMAT) is most widely used as a tantalum source for TaN barrier
Diiodosilane, as a silicon-based precursor material, can rapidly form a uniform and dense silicon nitride
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